Deposition of nanoporous silic films using a closed cup coater

ABSTRACT

A process for forming a uniform nanoporous dielectric film on a substrate. The process includes horizontally positioning a flat substrate within a cup; depositing a liquid alkoxysilane composition onto the substrate surface; covering the cup such that the substrate is enclosed therein; spinning the covered cup and spreading the alkoxysilane composition evenly on the substrate surface; exposing the alkoxysilane composition to water vapor and base vapor to thereby form a gel; and then curing the gel. The invention also provides an apparatus for spin depositing a liquid coating onto a substrate. The apparatus has a cylindrical cup with an open top section and removable cover which closes the top. A vapor injection port extends through the center of the cover. Suitable means hold a substrate centered within the cup and spin the cup.

CROSS REFERENCE TO RELATED APPLICATION

This application claims the benefit of U.S. Provisional PatentApplication serial No. 60/095,573 file Aug. 6, 1998.This applicationclaims is a division of U.S. patent application Ser. No. 09/360,131filed on Jul. 23, 1999.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to the production integrated circuits.More particularly, the invention relates to nanoporous dielectriccoatings useful in the production of integrated circuits.

2. Description of Prior Art

It is known in the art that, in the production of integrated circuits,the problems of interconnect RC delay, power consumption and crosstalkbecome more significant as feature sizes approach 0.25 μm and below. Ithas been found that the use of low dielectric constant (K) materials forinterlevel dielectric and intermetal dielectric applications partiallymitigate these problems. However, each of the material candidates whichare under consideration by the industry, having dielectric constantssignificantly lower than the currently employed dense silica, sufferfrom disadvantages. Most low dielectric constant materials developmentsuse spin-on-glasses and fluorinated plasma chemical vapor deposition ofSiO₂ with K of >3. Some organic and inorganic polymers have dielectricconstants in the range of about 2.2 to 3.5, however, these polymersexhibit problems of low thermal stability, and poor mechanicalproperties including low glass transition temperature, and sampleoutgassing, thereby raising questions concerning their long termreliability questions.

Density, or its inverse, porosity, is the key parameter controllingproperty of importance for dielectrics. Higher porosity materials notonly lead to a lower dielectric constant than dense materials, but theyalso allow additional components and processing steps to be introduced.As density decreases, dielectric constant and mechanical strengthdecrease, however the pore size increases. Important issues relating toporous materials include pore size; the strength decrease associatedwith porosity; and the role of surface chemistry on dielectric constant,loss and environmental stability.

One solution to these issues is the use of nanoporous silica, which canhave dielectric constants in the range of about 1 to 3. Nanoporoussilica is particularly attractive due to the ability to carefullycontrol its pore size and pore distribution, and because it employssimilar precursors such as tetraethoxysilane (TEOS), as is presentlyused for spin-on glass (SOG's), and CVD SiO₂. In addition to having lowdielectric constants, nanoporous silica offers other advantages formicroelectronics, including thermal stability up to 900° C.; small poresize (<<microelectronics features); use of materials, namely silica andits precursors, that are widely used in the semiconductor industry; theability to tune dielectric constant over a wide range; and depositionusing similar tools as employed for conventional spin-on glassprocessing. EP patent application EP 0 775 669 A2, which is incorporatedherein by reference, shows a method for producing a nanoporous silicafilm with uniform density throughout the film thickness.

Nanoporous silica films are typically fabricated by methods such asdip-coating or spin-coating. When spin-coating, a mixture of a solventand a silica precursor is deposited on a substrate wafer which is placedon a chuck in an open cup. The substrate is spun at several thousandrotations per minute (rpm's) in order to achieve a uniformly thin filmon the substrate. Typically, the substrate is open to the atmospheresuch that excess fluid can be flung from the substrate edge. However,turbulence around the substrate often results in a film which is notcompletely uniform, and which may vary in thickness. Turbulence isbelieved to cause defects such as striations, which are thicknessgradients in the deposited film that are started at the center of thesubstrate and spiral radially outward to the edge of the substrate. Thiscan cause a film to be nonuniform.

The present invention offers a solution to these problems. It has beenunexpectedly found that using a closed cup when spin-coating will reduceturbulence around the substrate and result in a more uniform film.According to the present invention, a cover is placed over the substratewafer so that the cup, cover, and substrate spin simultaneously. Thissimultaneous spinning eliminates turbulence that is normally found intraditional spin coating processes where only the substrate spins andthe cup is stationary. Subsequently, vapors of water and a base such asammonia are injected into the cover of the cup. Because of the lowerturbulence due to the covering of the cup, the silica precursor isuniformly exposed to the vapors and is polymerized until it forms a gel.After this exposure, the substrate is ready for curing. Using thisapproach, a nanoporous silica film is obtained with uniform density andfilm thickness. In another embodiment of the invention, the precursorcan be reacted with the base and water vapor after removal from the cup.

SUMMARY OF THE INVENTION

This invention provides a process for forming a nanoporous dielectriccoating on a substrate which comprises:

a) horizontally positioning a flat substrate within a cup;

b) depositing a liquid alkoxysilane composition onto a surface of thesubstrate;

c) covering the cup such that the substrate is enclosed therein;

d) spinning the covered cup and spreading the alkoxysilane compositionevenly on the substrate surface;

e) exposing the alkoxysilane composition to sufficient water vapor, basevapor or both water vapor and base vapor to thereby form a gel; and

f) curing the gel.

This invention further provides a semiconductor device produced by aprocess which comprises:

a) horizontally positioning a flat semiconductor substrate within a cup;

b) depositing a liquid alkoxysilane composition onto a surface of thesubstrate;

c) covering the cup such that the substrate is enclosed therein;

d) spinning the covered cup and spreading the alkoxysilane compositionevenly on the substrate surface;

e) exposing the alkoxysilane composition to sufficient water vapor, basevapor or both water vapor and base vapor to thereby form a gel; and

f) curing the gel.

This invention still further provides an apparatus for spin depositing aliquid coating onto a substrate which comprises:

a) a cylindrical cup having an open top section;

b) a removable cover which engages with and closes the top section;

c) a vapor injection port extending through the center of the cover;

d) means for holding a substrate centered within the cup; and

e) means for spinning the cup.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a schematic representation of a closed rotary cup usefulfor the invention.

FIG. 2 shows schematic representations of an alternate embodiment of aclosed rotary cup useful for the invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

In the practice of the present invention, an alkoxysilane precursorcomposition is formed from at least one alkoxysilane and a solventcomposition. A substrate wafer, optionally having a pattern of raisedlines on its surface (as described below), is horizontally placed insidea coverable cup. Then the alkoxysilane precursor composition is appliedonto the substrate. The cup is covered and spun to relatively uniformlyapply a layer of the precursor composition onto the substrate. Theprecursor composition is then exposed to water vapor and base vapor. Inone embodiment of the present invention, the water and base vapor areinjected directly into the closed cup. In another embodiment, the coatedsubstrate is exposed to the water and base vapor after the substrate isremoved from the cup. Exposure to these vapors hydrolyzes and condensesthe precursor composition until it forms a gel layer which issubsequently cured to form a nanoporous dielectric film on the surfaceof the substrate.

Useful alkoxysilanes for this invention include those which have theformula:

wherein at least 2 of the R groups are independently C₁ to C₄ alkoxygroups and the balance, if any, are independently selected from thegroup consisting of hydrogen, alkyl, phenyl, halogen, and substitutedphenyl. For purposes of this invention, the term alkoxy includes anyother organic group which can be readily cleaved from silicon attemperatures near room temperature by hydrolysis. R groups can beethylene glycoxy or propylene glycoxy or the like, but preferably allfoul R groups are methoxy, ethoxy, propoxy or butoxy. The most preferredalkoxysilanes nonexclusively include tetraethoxysilane (TEOS) andtetramethoxysilane.

Preferably, the solvent composition comprises a relatively highvolatility solvent or a relatively low volatility solvent or both arelatively high volatility solvent and a relatively low volatilitysolvent. The solvent, usually the higher volatility solvent, is at leastpartially evaporated immediately after deposition onto the substrate.This partial drying leads to better planarity due to the spinning of alower viscosity material after the first solvent or parts of the solventcomes off. The more volatile solvent evaporates over a period of secondsor minutes. Slightly elevated temperatures may optionally be employed toaccelerate this step. Such temperatures preferably range from about 20°C. to about 80° C., more preferably from about 20° C. to about 50° C.and most preferably from about 20° C. to about 35° C.

For purposes of this invention, a relatively high volatility solvent isone which evaporates at a temperature below, preferably significantlybelow, that of the relatively low volatility solvent. The relativelyhigh volatility solvent preferably has a boiling point of about 120° C.or less, more preferably about 100° C. or less. Suitable high volatilitysolvents nonexclusively include methanol, ethanol, n-propanol,isopropanol, n-butanol and mixtures thereof. Other relatively highvolatility solvent compositions which are compatible with the otheringredients can be readily determined by those skilled in the art.

The relatively low volatility solvent composition is one whichevaporates at a temperature above, preferably significantly above, thatof the relatively high volatility solvent. The relatively low volatilitysolvent composition preferably has a boiling point of about 175° C. orhigher, more preferably about 200° C. or higher. Suitable low volatilitysolvent compositions nonexclusively include alcohols and polyolsincluding glycols such as ethylene glycol, 1,4-butylene glycol,1,5-pentanediol, 1,2,4-butanetriol, 1,2,3-butanetriol,2-methyl-propanetriol, 2-(hydroxymethyl)-1,3-propanediol,1,4,1,4-butanediol, 2-methyl-1,3-propanediol, tetraethylene glycol,triethylene glycol monomethyl ether, glycerol and mixtures thereof.Other relatively low volatility solvent compositions which arecompatible with the other ingredients can be readily determined by thoseskilled in the art.

The alkoxysilane component is preferably present in an amount of fromabout 3% to about 50% by weight of the overall blend, more preferablyfrom about 5% to about 45% and most preferably from about 10% to about40%.

The solvent component is preferably present in an amount of from about20% to about 90% by weight of the overall blend, more preferably fromabout 30% to about 70% and most preferably from about 40% to about 60%.When both a high and a low volatility solvent are present, the highvolatility solvent component is preferably present in an amount of fromabout 20% to about 90% by weight of the overall blend, more preferablyfrom about 30% to about 70% and a most preferably from about 40% toabout 60% by weight of the overall blend. When both a high and a lowvolatility solvent are present, the low volatility solvent component ispreferably present in an amount of from about 1 to about 40% by weightof the overall blend, more preferably from about 3% to about 30% and amost preferably from about 5% to about 20% by weight of the overallblend.

Typical substrates are those suitable to be processed into an integratedcircuit or other microelectronic device. Suitable substrates for thepresent invention non-exclusively include semiconductor materials suchas gallium arsenide (GaAs), silicon and compositions containing siliconsuch as crystalline silicon, polysilicon, amorphous silicon, epitaxialsilicon, and silicon dioxide (SiO₂) and mixtures thereof. Lines mayoptionally be on the substrate surface. The lines, when present, aretypically formed by well known lithographic techniques and may becomposed of a metal, an oxide, a nitride or an oxynitride. Suitablematerials for the lines include silica, silicon nitride, titaniumnitride, tantalum nitride, aluminum, aluminum alloys, copper, copperalloys, tantalum, tungsten and silicon oxynitride. These lines form theconductors or insulators of an integrated circuit. Such are typicallyclosely separated from one another at distances preferably of from about20 micrometers or less, more preferably from about 1 micrometer or less,and most preferably of from about 0.05 to about 1 micrometer.

According to the invention, the alkoxysilane precursor composition isapplied to the substrate surface and spun inside a closed cup. As can beseen in FIG. 1, a typical cup 5 is provided with a removable cover 2.Inside the cup 5, a substrate wafer 4 rests on a platform 10 whichretains the substrate centered within the cup. The cup is connected to arotor stem 8. The rotor stem 8 is then attached to a motor (not shown).In the practice of the present invention, a motor (not shown) rotatesrotor stem 8. This rotation causes the cup 5, cover 2, and substrate 4to spin, evenly distributing the silane precursor on the substrate 4.Another key feature of the design is the very small void space 3 (<5 mm)above the substrate 4 and below the cover 2. This void space minimizesthe solvent evaporation during spin deposition to allow for a controlledsolvent environment. This covered rotary cup design is preferably usedto cause gelation of nanoporous silica films by injecting the water andbase vapors before, during, or after spin deposition. Because of thelower turbulence, the film surface is uniformly exposed to the watervapor/base catalyst but because of the high substrate velocities, highmass transfer rates to the liquid precursor are achieved resulting inshort reaction times. Therefore, directly after deposition andwater/catalyst exposure, the substrate may be removed from the closedcup and processed through a conventional hot plate bake and cureprocedure.

FIG. 2 shows another embodiment of the present invention. In FIG. 2, thecover 2 of cup 5 further comprises a vapor injection port which maycomprise a tube 12 and a coupling 14 which are used to inject watervapor and/or base vapor into the cup. The injection port is mounted tothe cover 2 via a coupling 14. In one embodiment, the tube 12 isremovable from the coupling 14 and the injection port is sealed prior tospinning the substrate in the closed cup. In another embodiment, thetube and coupling are rotatably mounted to the cover 2 so that the tubeand coupling remain stationary while the cup 5 and cover 2 are spun.This can be achieved by a variety of means such as mounting the coupling14 to a track within the cover 2 of the cup in a tongue-in-groovearrangement. Suitable materials for the apparatus of the presentinvention nonexclusively include stainless steel, plastic, and the like.Stainless steel cups can be purchased from SEMIX, Inc. of Fremont,Calif., or from TEL, America of Austin, Tex. Such may then be providedwith the above described coupling arrangement.

As stated above, the coating is exposed to both a water vapor and a basevapor in the cup. The water vapor causes a continued hydrolysis of thealkoxysilane alkoxy groups, and the base catalyzes condensation of thehydrolyzed alkoxysilane and serves to increase molecular weight untilthe coating gels, and ultimately increases gel strength. Preferably, thecoating is first exposed to a water vapor and then exposed to a basevapor, however, in an alternate embodiment, the coating may first beexposed to a base vapor and then a water vapor. For purposes of thisinvention, a base vapor includes gaseous bases.

The base is present in a catalytic amount which can be readilydetermined by those skilled in the art. Preferably the molar ratio ofbase to silane ranges from about 0 to about 0.2, more preferably fromabout 0.001 to about 0.05, and most preferably from about 0.005 to about0.02. Water is included to provide a medium for hydrolyzing thealkoxysilane. The mole ratio of water to silane is preferably from about0 to about 50, more preferably from about 0.1 to about 10 and a mostpreferably from about 0.5 to about 1.5.

In the preferred embodiment, the mole ratio of water vapor to base vaporpreferably ranges from about 1:3 to about 1:100, more preferably fromabout 1:5 to about 1:50, and most preferably from about 1:10 to about1:30.

In the preferred embodiment, the temperature of the water during theexposure preferably ranges from about 10° C. to about 60° C., morepreferably from about 15° C. to about 50° C., and most preferably fromabout 20° C. to about 40° C. In the preferred embodiment, thetemperature in the chamber after water exposure preferably ranges fromabout 10° C. to about 50° C., more preferably from about 15° C. to about40° C., and most preferably from about 20° C. to about 40° C.

In the preferred embodiment, the temperature of the base during theexposure preferably ranges from about 10° C. to about 60° C., morepreferably from about 15° C. to about 40° C., and most preferably fromabout 20° C. to about 30° C. In the preferred embodiment, thetemperature after base exposure preferably ranges from about 10° C. toabout 50° C., more preferably from about 15° C. to about 40° C., andmost preferably from about 20° C. to about 40° C.

Suitable bases for use in the base vapor nonexclusively include ammoniaand amines, such as primary, secondary and tertiary alkyl amines, arylamines, alcohol amines and mixtures thereof which have a preferredboiling point of about 200° C. or less, more preferably 100° C. or lessand most preferably 25° C. or less. Preferred amines are methylamine,dimethylamine, trimethylamine, n-butylamine, n-propylamine, tetramethylammonium hydroxide, piperidine and 2-methoxyethylamine. The ability ofan amine to accept a proton in water is measured in terms of thebasicity constant K_(b), and pK_(b)=−log K_(b). In the preferredembodiment, the pK_(b) of the base may range from about less than 0 toabout 9, more preferably from about 2 to about 6 and most preferablyfrom about 4 to about 5.

Once it forms into a gel, the film may be cured or dried in aconventional way by solvent evaporation of the less volatile solvent.Elevated temperatures may be employed to dry the coating in this step.Such temperatures preferably range from about 20° C. to about 450° C.,more preferably from about 50° C. to about 350° C. and most preferablyfrom about 175° C. to about 320° C.

As a result, a relatively high porosity, low dielectric constant,silicon containing polymer composition forms on the substrate. Thesilicon containing polymer composition preferably has a dielectricconstant of from about 1.1 to about 3.5, more preferably from about 1.3to about 3.0, and most preferably from about 1.5 to about 2.5. The poresize of silica composition preferably ranges from about 1 nm to about100 nm, more preferably from about 2 nm to about 30 nm, and mostpreferably from about 3 nm to about 20 nm. The density of the siliconcontaining composition, including the pores, preferably ranges fromabout 0.1 to about 1.9 g/cm², more preferably from about 0.25 to about1.6 g/cm², and most preferably from about 0.4 to about 1.2 g/cm².

The following nonlimiting examples serve to illustrate the invention.

EXAMPLE 1

This example demonstrates that the use of a rotary cup for spin coatingcan eliminate/minimize film non-uniformity's (i.e. radial striations).

The precursor is synthesized by adding 104.0 mL of tetraethoxysilane,47.0 mL of triethylene glycol monomethyl ether, 8.4 mL of deionizedwater, and 0.34 mL of 1N nitric acid together in a round bottom flask.The solution is allowed to mix vigorously, and is then heated to ˜80° C.and refluxed for 1.5 hours to form a solution. After the solution isallowed to cool, it is diluted 25% by weight with ethanol to reduce theviscosity. The diluted precursor is filtered to 0.1 μm using a teflonfilter.

Two nanoporous silica films are processed in which the first isdeposited using a rotary closed cup spin coater while the other is spunon a conventional coater. The first substrate wafer is spun on a rotarycup coater using the following process sequence: Open the cup and placesubstrate on a chuck. Deposit 2.0-10.0 ml of precursor and close thecup. Spin substrate and cup simultaneously to minimize the turbulence.Open the cup and spin at low rpm (<50 rpm) to allow for solventevaporation. Continue processing the substrate. The second film isdeposited on a conventional spin coater using the following processsequence. Place the substrate on the chuck. Deposit 2.0-10.0 ml of theprecursor and spin at 2500 rpm for 30 seconds. Continue processingsubstrate.

The films are gelled and aged in a vacuum chamber using the followingconditions. The chamber is evacuated to −20 inches of Hg. Next, 15Mammonium hydroxide is heated and equilibrated at 45° C. and dosed intothe chamber to increase the pressure to −4.0 inches of Hg for 2-3minutes. Finally, the chamber is evacuated to −20.0 inches of Hg andbackfilled with nitrogen. The films are then solvent exchanged by which25-50 mL of a 50/50 (by vol.) mixture of 3-pentanone andhexamethyldisilazane (Pacific Pac, Hollister, Calif. 95023) are spun onthe film at 250 rpm's for 20 seconds without allowing the film to dry.The films are then spun dry at 1000 rpm for 5 seconds. The films areheated at elevated temperatures for 1 min. each at 175° C. and 320° C.in air. The films are characterized by ellipsometry to determine therefractive indices and thicknesses. In addition, the films are inspectedusing a light microscope at a magnification of 400× to observe forradial striations. The rotary closed cup processed film has no observedstriations and has excellent thickness and refractive index uniformitywhile the regular deposited film shows some striations and poorerrelative surface uniformity.

EXAMPLE 2

This example demonstrates that the use of a rotary cup for spin coatingcan improve global planarity on patterned substrates.

A precursor is synthesized by adding 104.0 mL of tetraethoxysilane, 47.0mL of triethylene glycol monomethyl ether, 8.4 mL of deionized water,and 0.34 mL of 1N nitric acid together in a round bottom flask. Thesolution is allowed to mix vigorously, and is then heated to ˜80° C. andrefluxed for 1.5 hours to form a solution. After the solution is allowedto cool, it is diluted 25% by weight with ethanol to reduce theviscosity. The diluted precursor is filtered to 0.1 μm using a teflonfilter.

Two nanoporous silica films are processed in which the first isdeposited using a rotary cup spin coater while the other is spun on aconventional coater. The first substrate is spun on a rotary closed cupcoater using the following process sequence. Open the cup and place thepatterned substrate on the chuck. Deposit 2.0-10.0 ml of precursor usinga static dispense and close the cup. Spin the film at 2-3 krpm for30-180 seconds. Planarize the precursor by spinning at a very high rpm(˜5 krpm). Open the cup and spin dry the substrate at a low rpm (<50rpm) to allow for solvent evaporation. Continue processing thesubstrate. The second film is deposited on a conventional spin coaterusing the following process sequence: Place the patterned substrate onthe chuck. Deposit 2.0-10.0 ml of the precursor and spin at 2500 rpm for30 seconds. Continue processing substrate. The films are gelled and agedin a vacuum chamber using the following conditions. The chamber isevacuated to −20 inches of Hg. Next, 15M ammonium hydroxide is heatedand equilibrated at 45° C. and dosed into the chamber to increase thepressure to −4.0 inches Hg for 2-3 minutes. Finally, the chamber isevacuated to −20.0 inches of Hg and backfilled with nitrogen.

The films are then solvent exchanged by which 25-50 mL of a 50/50 (byvol.) mixture of 3-pentanone and hexamethyldisilazane are spun on thefilm at 250 rpm's for 20 seconds without allowing the film to dry. Thefilms are then spun dry at 1000 rpm for 5 seconds.

The films are heated at elevated temperatures for 1 min. each at 175° C.and 320° C. in air. The films are inspected by cross-sectional SEM at amagnification of 5000-40000× to observe for global planarity. It isobserved that the rotary closed cup film has relatively better globalplanarity while the regularly deposited film shows relatively poorerglobal planarity.

EXAMPLE 3

Example 1 is repeated except after precursor deposition, it is gelledand aged by first dosing water vapor into the closed cup. Thereafter,ammonium hydroxide vapor is dosed into the closed cup.

EXAMPLE 4

Example 1 is repeated except after precursor deposition, it is gelledand aged by first dosing ammonium hydroxide vapor into the closed cup.Thereafter, water vapor is dosed into the closed cup.

EXAMPLE 5

Example 1 is repeated except after precursor deposition, it is gelledand aged by dosing a mixture of water and ammonium hydroxide vapor intothe closed cup.

The foregoing examples show that by using closed cup spin coating of asubstrate with a nanoporous coating composition precursor, that filmshaving improved planarity and striation characteristics are produced.

What is claimed is:
 1. A coated substrate produced by a process whichcomprises: a) horizontally positioning a flat substrate within a cup; b)depositing a liquid alkoxysilane composition onto a surface of thesubstrate; c) covering the cup such that the substrate is enclosedtherein; d) spinning the covered cup and spreading the alkoxysilanecomposition evenly on the substrate surface; e) exposing thealkoxysilane composition to sufficient water vapor, base vapor or bothwater vapor and base vapor to thereby form a gel; and f) curing the gel.2. A semiconductor device produced by a process which comprises: a)horizontally positioning a flat semiconductor substrate within a cup; b)depositing a liquid alkoxysilane composition onto a surface of thesubstrate; c) covering the cup such that the substrate is enclosedtherein; d) spinning the covered cup and spreading the alkoxysilanecomposition evenly on the substrate surface; e) exposing thealkoxysilane composition to sufficient water vapor, base vapor or bothwater vapor and base vapor to thereby form a gel; and f) curing the gel.3. The coated substrate of claim 1 wherein the alkoxysilane compositioncomprises an alkoxysilane component having the formula:

wherein at least 2 of the R groups are independently C₁ to C₄ alkoxygroups and the balance, if any, are independently selected from thegroup consisting of hydrogen, alkyl, phenyl, halogen, and substitutedphenyl.
 4. The coated substrate of claim 1 wherein the alkoxysilanecomposition comprises tetraethoxysilane or tetramethoxysilane.
 5. Thecoated substrate of claim 1 wherein the alkoxysilane compositioncomprises a relatively high volatility solvent or a relatively lowvolatility solvent or both a relatively high volatility solvent and arelatively low volatility solvent.
 6. The coated substrate of claim 1wherein the alkoxysilane composition comprises a solvent componentcomprising a relatively the high volatility solvent component in anamount of from about 20% to about 90% by weight of the alkoxysilanecomposition and a relatively low volatility solvent component in anamount of from about 1 to about 40% by weight of the overallalkoxysilane composition.
 7. The coated substrate of claim 1 wherein thesubstrate comprises a semiconductor material.
 8. The coated substrate ofclaim 1 wherein the substrate comprises lines on the substrate surfacewhich are comprised of a metal, an oxide, a nitride or an oxynitride. 9.The coated substrate of claim 1 wherein the base is selected from thegroup consisting of ammonia, ammonium hydroxide and amines.
 10. Thecoated substrate of claim 1 wherein the dielectric coating comprises asilicon containing polymer composition having a dielectric constant offrom about 1.1 to about 3.5.
 11. The coated substrate of claim 1 whereinthe dielectric coating comprises a silicon containing polymercomposition having pores ranging from about 1 nm to about 100 nm. 12.The coated substrate of claim 1 wherein the dielectric coating comprisesa silicon containing polymer composition having a density of the siliconcontaining composition, including the pores ranging from about 0.1 toabout 1.9 g/cm².
 13. The coated substrate of claim 1 wherein theexposing is conducted by first dosing water vapor into the closed cupand then dosing the base vapor into the closed cup.
 14. The coatedsubstrate of claim 1 wherein the exposing is conducted by first dosingbase vapor into the closed cup and then dosing the water vapor into theclosed cup.
 15. The coated substrate of claim 1 wherein the exposing isconducted by dosing a mixture of water vapor and base vapor into theclosed cup.
 16. The coated substrate of claim 1 further comprising thesubsequent step of exposing the cured gel to hexamethyldisilazane anddrying.
 17. The coated substrate of claim 1 wherein the gel is formedunder vacuum conditions.